发明名称 |
RESIST UNDERLAYER FILM FORMATION COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME |
摘要 |
A novel resist underlayer film formation composition for lithography includes: a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent:;;(where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched C1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R1, R2, and R3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C1-6 alkyl group optionally having a C1-3 alkoxy group as a substituent). |
申请公布号 |
US2016238936(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201415023823 |
申请日期 |
2014.09.22 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
NISHITA Tokio;OHNISHI Ryuji;FUJITANI Noriaki;SAKAMOTO Rikimaru |
分类号 |
G03F7/11;C09D167/00;G03F7/32;G03F7/20;G03F7/16 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
1. A resist underlayer film formation composition for lithography comprising:
a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent:(where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched C1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R1, R2, and R3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C1-6 alkyl group optionally having a C1-3 alkoxy group as a substituent). |
地址 |
Tokyo JP |