发明名称 |
Rectifier circuit with a voltage sensor |
摘要 |
A rectifier circuit with a semiconductor element is disclosed. The semiconductor element includes at least one field effect transistor with a control electrode, and at least one driver. The driver cooperates with a voltage sensor, and controls the field effect transistor to a conducting state. The semiconductor element includes the voltage sensor insulated from the at least one field effect transistor. The voltage sensor includes a separate sensor electrode, and a sensor capacitance of the voltage sensor forms a non-linear voltage divider with a reference capacitance. |
申请公布号 |
US9509228(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201314132026 |
申请日期 |
2013.12.18 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Deboy Gerald |
分类号 |
H01L29/78;H02M7/217;H01L27/08;H01L29/40;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
Dicke, Billig & Czaja, PLLC |
代理人 |
Dicke, Billig & Czaja, PLLC |
主权项 |
1. A rectifier circuit with a semiconductor element, the semiconductor element comprising:
at least one field effect transistor with a control electrode, a source electrode and a drain electrode; at least one driver, which cooperates with a voltage sensor being monolithically integrated in the semiconductor element and wherein the at least one driver controls the field effect transistor to a conducting state; and wherein the semiconductor element comprises the voltage sensor insulated from the at least one field effect transistor, wherein the voltage sensor comprises a separate sensor electrode, and in which a sensor capacitance of the voltage sensor forms a non-linear voltage divider with a reference capacitance. |
地址 |
Villach AT |