POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE

摘要

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

主权项

1. A cleaning composition comprising at least one quaternary base, at least one organic amine, at least one corrosion inhibitor, and at least one solvent, wherein the corrosion inhibitor is selected from the group consisting of 4-methylpyrazole, pyrazole, 2-amino-thiazole, 2-amino-1,3,4-thiadiazole, pterine, pyrazine, cytosine, pyridazine, derivatives thereof, and combinations thereof, and wherein the cleaning composition is substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide.