| 摘要 |
PROBLEM TO BE SOLVED: To inhibit rotation of a polarization angle at the time of mounting to achieve stable polarization characteristics.SOLUTION: A semiconductor laser device manufacturing method comprises: a process A of preparing an n-type semiconductor substrate having a first surface and a second surface on the side opposite to the first surface; a process B forming a semiconductor layer including an active layer on the first surface of the semiconductor substrate and subsequently forming a plurality of light emission parts; a process C of forming an insulation film immediately above the semiconductor layer; a process D of integrally forming on the semiconductor layer, an anode electrode having a thickness of equal to or more than 10 μm as to apply a common voltage to the plurality of light emission parts; a process E of electrically dividing the semiconductor substrate in a direction from the second surface to the first surface of the semiconductor substrate into a plurality of regions and forming a grove which pierces the semiconductor substrate and the semiconductor layer to reach the first insulation film; a process F of forming a cathode electrode on each second surface of the plurality of regions; and a process G of bonding the anode electrode after performing the process E, to a chip mounting surface of a support substrate via a bonding material. |
