MAGNETORESISTIVE ELEMENT AND STORAGE CIRCUIT

摘要

A magnetoresistive element that is provided with: a free layer 10 which is provided with a magnetostrictive layer 11 containing a magnetostrictive material; a pinned layer 18 which is provided with a first ferromagnetic layer 16; a thin film which is arranged between the pinned layer and the free layer; a piezoelectric body 22 which is arranged so as to surround at least a part of the magnetostrictive layer from a direction intersecting with the lamination direction of the free layer and the pinned layer, and which applies a pressure to the magnetostrictive layer; and an electrode 24 which is capable of applying a voltage that is different from the voltage applied to the free layer and the voltage applied to the pinned layer, and which applies a voltage to the piezoelectric body so that the piezoelectric body applies a pressure to the magnetostrictive layer.