| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that is excellent in electrostatic breakdown voltage performance.SOLUTION: A light-emitting element comprises: an element structure 1 that comprises a first electrode layer 11 provided on a semiconductor laminate structure body 13 and electrically connected with a first conductivity type semiconductor layer 14, and a second electrode layer 12 provided on the semiconductor laminate structure body 13 and on the same surface side as the first electrode layer 11 and electrically connected with a second conductivity type semiconductor layer 16; an electrode lamination structure 2 configured by laminating a first metal layer 41 provided on the element structure 1 and electrically connected with the first electrode layer 11, a first dielectric layer 51 provided on the first metal layer 41, a second metal layer 42 provided on the first dielectric layer 51 and electrically connected with the second electrode layer 12, and a second dielectric layer 52 provided on the second metal layer 42; a first surface metal layer 41x provided at a part on the second dielectric layer 52 and electrically connected with the first metal layer 41; and a second surface metal layer 42x provided at the other part on the second dielectric layer 52 and electrically connected with the second metal layer 42.SELECTED DRAWING: Figure 3 |
