| 摘要 |
PROBLEM TO BE SOLVED: To provide a power transistor drive device capable of turning a field effect transistor on in the early stage, after an insulated gate bipolar transistor is turned on.SOLUTION: A power transistor drive device 1 includes an IGBT gate voltage monitoring circuit 12 for detecting whether or not an insulated gate bipolar transistor 20 is turned on. When the IGBT gate voltage monitoring circuit 12 has detected turn-on of the IGBT20 and outputted an on-permission signal, a FET gate drive circuit 13 generates a gate voltage for turning a field effect transistor 30 on. Consequently, after the insulated gate bipolar transistor 20 is turned on, the field effect transistor 30 can be turned on in the early stage.SELECTED DRAWING: Figure 1 |
