| 摘要 |
A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are epitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The epitaxially grown layers for the photodiode devices may be either undoped or in-situ doped with profiles suitable for their respective operation. With appropriate choice of substrate materials, device layers and heterojunction engineering and process architecture, it is possible co fabricate siliconbased and germanium-based multi-spectral sensors that can deliver pixel density and cost of fabrication comparable to the state of the art CCDs and CMOS image sensors. The method can be implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, Thick-Film and Thin-Film Germanium-On-Insulator (GeOI).
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