发明名称 |
HETERO-JUNCTION SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a hetero-junction semiconductor device which inhibits the occurrence of chips and cracks and has less on-resistance.SOLUTION: A hetero-junction semiconductor device comprises: a channel layer 10 including a semiconductor; and a barrier layer 12 which is arranged on the channel layer 10 and includes a semiconductor having a band gap larger than that of the channel layer 10. The barrier layer 12 includes: a first barrier layer 12a composed of a semiconductor layer where a crystal structure in contact with the channel layer 10 is uniform; and a second barrier layer 12b having less stress against the channel layer 10 compared with the first barrier layer 12a.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016207890(A) |
申请公布日期 |
2016.12.08 |
申请号 |
JP20150089535 |
申请日期 |
2015.04.24 |
申请人 |
TOYOTA MOTOR CORP;TOYOTA GAKUEN |
发明人 |
KUSHIDA TOMOYOSHI;NAGASATO YOSHITAKA;SAKAKI HIROYUKI |
分类号 |
H01L21/338;H01L21/336;H01L29/778;H01L29/78;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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