| 摘要 |
<p>PURPOSE: A resistance RAM device and a method for manufacturing the same are provided to minimize the current path between the bottom electrode contact and the binary oxide film by forming the bottom electrode contact by vertically growing up the carbon nanotube. CONSTITUTION: A switching element(110) is formed on the semiconductor substrate. A bottom electrode contact(122) is connected to the switching element electrically and includes the carbon nanotube. The binary oxide film is formed on the bottom electrode contact and stores the information according to two resistive states. The upper electrode is formed on the binary oxide film. The metal wiring is contacted with the upper electrode.</p> |
