发明名称 Data storage device and data checking and correction for volatile memory
摘要 Data checking and correction for a volatile memory of a data storage device, the data storage device further including a non-volatile memory and a controller. The controller operates the non-volatile memory in accordance with requests issued from a host. The controller uses the volatile memory for temporary storage of temporary data required for operations of the non-volatile memory. The controller generates error checking and correction content for the temporary data and writes the temporary data and the error checking and correction content into the volatile memory in at least one burst length for temporary storage of the temporary data. In this manner, it is not necessary to manufacture any additional pin on the volatile memory for data checking and correction.
申请公布号 US9519541(B2) 申请公布日期 2016.12.13
申请号 US201414271813 申请日期 2014.05.07
申请人 VIA TECHNOLOGIES, INC. 发明人 Feng Lei
分类号 G06F11/00;G06F11/10 主分类号 G06F11/00
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A data storage device, comprising: a non-volatile memory; a volatile memory; and a controller, operating the non-volatile memory in accordance with requests issued from a host and using the volatile memory for temporary storage of temporary data for operations of the non-volatile memory, wherein: the controller generates error checking and correction content for the temporary data and writes the temporary data and the error checking and correction content into the volatile memory in format of at least one burst length for temporary storage of the temporary data, wherein the controller writes the temporary data into the volatile memory for temporary storage in format of a plurality of burst lengths; the controller generates one error checking and correction word for each burst length of temporary data and combines the generated error checking and correction words to form the error checking and correction content; and the controller writes the error checking and correction content into the volatile memory in format of one burst length after writing the temporary data into the volatile memory for temporary storage in format of the plurality of burst lengths.
地址 New Taipei TW