发明名称 Triggering, at a host system, a process to reduce declared capacity of a storage device
摘要 Systems, methods and/or devices are used to enable triggering, at a host system, a process to reduce declared capacity of a storage device. In one aspect, the method includes, at a host to which a storage device of the storage system is operatively coupled: (1) obtaining one or more metrics of the storage device, the storage device including non-volatile memory, (2) detecting a trigger condition in accordance with the one or more metrics of the storage device, and (3) enabling an amelioration process associated with the detected trigger condition, the amelioration process to reduce declared capacity of the non-volatile memory of the storage device. In some embodiments, the storage device includes one or more flash memory devices.
申请公布号 US9519427(B2) 申请公布日期 2016.12.13
申请号 US201514621219 申请日期 2015.02.12
申请人 SANDISK TECHNOLOGIES LLC 发明人 Samuels Allen;Kruger Warren Fritz;Truong Linh Tien
分类号 G06F12/16;G06F3/06;G06F12/02 主分类号 G06F12/16
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A method of managing a storage system, the method comprising: at a host to which a storage device of the storage system is operatively coupled: obtaining one or more metrics of the storage device, the storage device including non-volatile memory;detecting a trigger condition in accordance with the one or more metrics of the storage device;enabling an amelioration process associated with the detected trigger condition, the amelioration process to reduce declared capacity of the non-volatile memory of the storage device, wherein declared capacity is storage capacity available to the host;prior to detecting the trigger condition, detecting a first wear condition of the non-volatile memory of the storage device, wherein a total storage capacity of the non-volatile memory of the storage device includes declared capacity and over-provisioning; andin response to detecting the first wear condition, performing a remedial action that reduces over-provisioning of the non-volatile memory of the storage device without reducing declared capacity of the non-volatile memory of the storage device.
地址 Plano TX US