| 发明名称 |
SEMICONDUCTOR DEVICES HAVING A SPACER ON AN ISOLATION REGION |
| 摘要 |
A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided. |
| 申请公布号 |
US2016293749(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201514974018 |
申请日期 |
2015.12.18 |
| 申请人 |
PARK Byungjae;SHIN Heonjong;CHO Hagju;YEO Kyounghwan |
发明人 |
PARK Byungjae;SHIN Heonjong;CHO Hagju;YEO Kyounghwan |
| 分类号 |
H01L29/78;H01L29/417;H01L29/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a fin active region protruding from a substrate and an isolation region defining the fin active region; a gate pattern intersecting the fin active region and the isolation region; and a gate spacer formed on a side surface of the gate pattern and configured to extend onto a surface of the isolation region. |
| 地址 |
Seongnam-si KR |
