| 发明名称 |
HYBRID ASPECT RATIO TRAPPING |
| 摘要 |
A semiconductor structure includes a material stack located on a surface of a semiconductor substrate. The material stack includes, from bottom to top, a silicon germanium alloy portion that is substantially relaxed and defect-free and a semiconductor material pillar that is defect-free. A dielectric material structure surrounds sidewalls of the material stack and is present on exposed portions of the semiconductor substrate. |
| 申请公布号 |
US2016293704(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201514672311 |
申请日期 |
2015.03.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Divakaruni Ramachandra;He Hong;Li Juntao |
| 分类号 |
H01L29/10;H01L21/28;H01L29/161;H01L29/78 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
a material stack located on a surface of a semiconductor substrate and comprising, from bottom to top, a silicon germanium alloy portion that is substantially relaxed and defect-free and a semiconductor material pillar that is defect-free; and a dielectric material structure surrounding sidewalls of said material stack and present on exposed portions of said semiconductor substrate. |
| 地址 |
Armonk NY US |
