| 摘要 |
PROBLEM TO BE SOLVED: To reduce quality deterioration of a crystal.SOLUTION: A manufacturing method of a silicon carbide crystal according to the invention includes: a preparation step of preparing a seed crystal 3, a crucible 5, and a solution 6 in which carbon is dissolved in a silicon solvent arranged in the crucible 5; a contacting step of contacting a lower surface of the seed crystal 3 to the solution 6; a growth step of growing the silicon carbide crystal on the lower surface of the seed crystal 3 by lifting the seed crystal 3; and a separation step of separating a grown crystal 2 from the solution 6. In the separation step, a lower surface of the crystal 2 is inclined such that the solution 6 attaching on the lower surface of the crystal 2 moves toward a part of an edge of the lower surface of the crystal 2. As a result, quality deterioration of a crystal can be reduced.SELECTED DRAWING: Figure 1 |
