| 摘要 |
PROBLEM TO BE SOLVED: To suppress power consumption by reducing the number of times of refresh operations, and to read out data without damaging data previously written.SOLUTION: A memory device comprises a plurality of memory cells each including: a first transistor including a first electrode serving as one of a source and a drain, a second electrode serving as the other of the source and the drain, and a first gate electrode provided overlapping with a first channel formation region via an insulation film; and a second transistor including a third electrode serving as one of a source and a drain, a fourth electrode serving as the other of the source and the drain, and a second channel formation region provided between the second gate electrode and the third gate electrode via the insulation film. The first channel formation region and the second channel formation region include an oxide semiconductor, and the second electrode is directly connected to the second gate electrode.SELECTED DRAWING: Figure 1 |
