| 发明名称 |
Gate-induced strain for MOS performance improvement |
| 摘要 |
A method including forming a device on a substrate, the device including a gate electrode on a surface of the substrate; a first junction region and a second junction region in the substrate adjacent the gate electrode; and depositing a straining layer on the gate electrode.
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| 申请公布号 |
US2005167652(A1) |
申请公布日期 |
2005.08.04 |
| 申请号 |
US20050070365 |
申请日期 |
2005.03.01 |
| 申请人 |
HOFFMANN THOMAS;CEA STEPHEN M.;GILES MARTIN D. |
发明人 |
HOFFMANN THOMAS;CEA STEPHEN M.;GILES MARTIN D. |
| 分类号 |
H01L21/28;H01L29/10;H01L29/49;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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