| 摘要 |
A method of manufacturing a semiconductor apparatus of the present invention comprises forming body diffusion layer, a gate electrode, and an interlayer dielectric over an surface of a semiconductor substrate, forming a photoresist having an opening in a region overlapping with a part of the body diffusion layer, removing the interlayer dielectric to form an opening using the photoresist as a mask, forming a body contact diffusion layer by implanting ion in the opening of the interlayer dielectric using the photoresist as a mask, forming a source contact by removing neighboring portion of the opening of the interlayer dielectric using the photoresist as a mask after the body contact diffusion layer 13 is formed, and removing the photoresist.
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