MAGNETIC SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

An In x Ga 1-x As y Sb 1-y (0 < x ‰¦ 1, 0 ‰¦ y ‰¦ 1) thin film of an electron concentration of 2 × 10 16 /cm 3 or more is formed on a dielectric substrate. Temperature dependence of resistance is controlled by composition setting or donor atom doping of the thin film to reduce the temperature dependence. As a result, a magnetic sensor of small temperature dependence of device resistance and high sensitivity can be provided.