摘要 |
<p>Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a process chamber is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, a chamber body and a gas manifold assembly are grounded and separated by electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.</p> |
申请人 |
APPLIED MATERIALS, INC.;MA, PAUL;SHAH, KAVITA;WU, DIEN-YEH;GANGULI, SESHADRI;MARCADAL, CHRISTOPHE;WU, FREDERICK, C.;CHU, SCHUBERT, S. |
发明人 |
MA, PAUL;SHAH, KAVITA;WU, DIEN-YEH;GANGULI, SESHADRI;MARCADAL, CHRISTOPHE;WU, FREDERICK, C.;CHU, SCHUBERT, S. |