发明名称 MASK PATTERN AND METHOD FOR FORMING THE SAME
摘要 The invention provides a mask pattern. The mask pattern comprises at least a continuous pattern. Each of the continuous patterns has a first pattern, a second pattern and a set of assistance patterns. The assistant patterns are located between the first pattern to the second pattern. The first pattern, the assistant patterns and the second pattern together form a closed opening.
申请公布号 US2008220341(A1) 申请公布日期 2008.09.11
申请号 US20070683778 申请日期 2007.03.08
申请人 UNITED MICROELECTRONICS CORP. 发明人 FU CHUAN-HSIEN;YANG CHUEN-HUEI;KUO CHIEN-LI;WANG SHU-RU;WANG YU-LIN
分类号 G03F1/00 主分类号 G03F1/00
代理机构 代理人
主权项
地址