| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of removing a carbon thin film of resist or the like by the use of active nitride species containing nitrogen gas atoms, a surface modifying method of nitriding the surface of a layer adjacent to the resist film, and a treatment device used therefor. SOLUTION: The treatment device 1 is equipped with a means 7 for exhausting a chamber 2, a means 9 for holding a substrate 8 equipped with a layer treated inside the chamber 2, a power supply 4 for resistance-heating a high- melting material 3 from outside the chamber 2, and a gas introducing means 6 for introducing gas molecules 5 containing nitrogen atoms into the chamber 2 so as to generate active nitride species 18 containing nitrogen gas atoms. By the use of the active nitride species 18 generated through the treatment device 1, the resist film is removed from the substrate provided with the carbon thin film of resist or the like, or the surface of an insulating layer is nitrided, or the surface of the layer where the carbon thin film of resist or the like is attached is nitrided so as to be modified. COPYRIGHT: (C)2004,JPO |
