| 发明名称 | Two-dimensional guard structure and a radiation detector with the same | ||
| 摘要 | A semiconductor device comprises a piece of semiconductor material. On a surface of said piece of semiconductor material, a number of electrodes exist and are configured to assume different electric potentials. A guard structure comprises a two-dimensional array of conductive patches, at least some of which are left to assume an electric potential under the influence of electric potentials existing at said electrodes. | ||
| 申请公布号 | US9530902(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201213528065 | 申请日期 | 2012.06.20 |
| 申请人 | Oxford Instruments Analytical Oy | 发明人 | Kostamo Pasi |
| 分类号 | H01L31/02;H01L31/115;H01L31/0224;H01L29/06 | 主分类号 | H01L31/02 |
| 代理机构 | Wood, Phillips, Katz, Clark & Mortimer | 代理人 | Wood, Phillips, Katz, Clark & Mortimer |
| 主权项 | 1. A guard structure for a semiconductor device, comprising: a two-dimensional array of conductive patches on a surface of said semiconductor device, comprising a contiguous area of conductive patches located at or near an edge of said surface, at least some of which are left to assume an electric potential under the influence of electric potentials existing at sides of said two-dimensional array for controllably lowering absolute value of electric potential on said surface, and one or more guard rings that encircle a central portion of said surface, wherein at least one of said guard rings is interrupted by a sequence of said conductive patches. | ||
| 地址 | Espoo FI | ||