Apparatuses and methods for setting a signal in variable resistance memory

摘要

An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupled to the STT memory cell to determine a read current (IREAD) through the STT memory cell and to set a pulse to write the STT memory cell using IREAD. Additional embodiments are disclosed.

主权项

1. An apparatus, comprising:
a data line; an access device; a magnetic tunnel junction (MTJ) cell coupled between the data line and the access device, wherein the access device is configured to control a cell current (ICELL) flowing through the MTJ; and a comparator configured to compare current flowing through the data line to a reference current set specifically for the cell, and to cause the data line to be deselected responsive to the current flowing through the data line being greater than or equal to the reference current.