| 发明名称 | Memory cell with decoupled read/write path | ||
| 摘要 | A memory cell with a decoupled read/write path, the memory cell includes a switch comprising a gate, a first terminal and a second terminal, a resistive switching device connected to the gate of the switch, and a conductive path between the gate of the switch and the second terminal. | ||
| 申请公布号 | US9530462(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201514593383 | 申请日期 | 2015.01.09 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd | 发明人 | Ting Yu-Wei;Huang Kuo-Ching;Tsai Chun-Yang |
| 分类号 | G11C13/00;G11C7/02;G11C11/16 | 主分类号 | G11C13/00 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A memory cell with a decoupled read/write path, the memory cell comprising: a switch comprising a gate, a first terminal and a second terminal; a resistive switching device connected to the gate of the switch; and a conductive path between the gate of the switch and the second terminal that allows electric current to flow between the gate of the switch and the second terminal without flowing through the switch. | ||
| 地址 | Hsin-Chu TW | ||