发明名称 |
EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME |
摘要 |
An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located in the epitaxial layer. The method includes following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. An epitaxial layer is epitaxially grown from the epitaxial growth surface to enclose the carbon nanotube layer therein. |
申请公布号 |
US2016380147(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201615263338 |
申请日期 |
2016.09.12 |
申请人 |
Tsinghua University ;HON HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
WEI YANG;FAN SHOU-SHAN |
分类号 |
H01L33/00;H01L21/67;C30B29/40;C01B21/06;C30B25/18;H01L21/02;C01B31/02 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for making an epitaxial structure, the method comprising:
providing a substrate having an epitaxial growth surface; suspending a carbon nanotube layer above the epitaxial growth surface, wherein the carbon nanotube layer is free-standing and spaced from the epitaxial growth surface; applying a voltage between two opposite sides of the carbon nanotube layer so that the carbon nanotube layer produces heat to heat the substrate; and epitaxially growing an epitaxial layer on the epitaxial growth surface. |
地址 |
Beijing CN |