发明名称 EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME
摘要 An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located in the epitaxial layer. The method includes following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is suspended above the epitaxial growth surface. An epitaxial layer is epitaxially grown from the epitaxial growth surface to enclose the carbon nanotube layer therein.
申请公布号 US2016380147(A1) 申请公布日期 2016.12.29
申请号 US201615263338 申请日期 2016.09.12
申请人 Tsinghua University ;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 WEI YANG;FAN SHOU-SHAN
分类号 H01L33/00;H01L21/67;C30B29/40;C01B21/06;C30B25/18;H01L21/02;C01B31/02 主分类号 H01L33/00
代理机构 代理人
主权项 1. A method for making an epitaxial structure, the method comprising: providing a substrate having an epitaxial growth surface; suspending a carbon nanotube layer above the epitaxial growth surface, wherein the carbon nanotube layer is free-standing and spaced from the epitaxial growth surface; applying a voltage between two opposite sides of the carbon nanotube layer so that the carbon nanotube layer produces heat to heat the substrate; and epitaxially growing an epitaxial layer on the epitaxial growth surface.
地址 Beijing CN