| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film deposition system and a thin film deposition method where new parameters, e.g., capable of improving the uniformity of film thickness and film quality without reducing a film deposition rate can be set on thin film deposition, and to provide a method of producing an active matrix substrate. SOLUTION: In an atmospheric pressure CVD (Chemical Vapor Deposition) system 10A, at the time of depositing a thin film on the surface of a substrate 20A, the substrate 20A is arranged inside a reaction chamber 11A, and further, the substrate 20A is heated from the outside of the reaction chamber 11A by a heater 12A to hold the substrate 20A to a fixed temperature. In this state, the pressure at the inside of the reaction chamber 11A is reduced by an evacuation apparatus 13A, and further, a gaseous starting material from a gas bomb 14A is fed to the inside of the reaction chamber 11A via a gas feeding means. At this time, the gaseous starting material is fed to the inside of the reaction chamber 11A in a state where the gaseous starting material is cooled to a prescribed temperature by a cooling means. The gas feeding means and the cooling means are independently provided. COPYRIGHT: (C)2005,JPO&NCIPI
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