摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a near infrared absorbing composition for a solid state imaging device, whose infrared absorptivity is not deteriorated by heat in a process for producing the solid state imaging device and which sufficiently absorbs light having wavelengths in a region of 650-750 nm, and the solid state imaging device with which the optical system of a camera can be made small-sized without damaging color reproduction performance. <P>SOLUTION: The near infrared absorbing composition for the solid state imaging device contains a carrier comprising a transparent resin, its precursor or their mixture and an oxytitanium phthalocyanine, preferably Y-type orβ-type oxytitanium phthalocyanine. In the solid state imaging device having a color filter layer and a microlens on a plurality of photoelectric transfer elements, the color filter layer contains the oxytitanium phthalocyanine. Further, in the solid state imaging device having a color filter layer, a microlens and a transparent resin layer on a plurality of photoelectric transfer elements, the transparent resin layer contains the oxytitanium phthalocyanine. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |