发明名称 |
Crystal growth apparatus and manufacturing method of group III nitride crystal |
摘要 |
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
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申请公布号 |
US2007084399(A1) |
申请公布日期 |
2007.04.19 |
申请号 |
US20060546989 |
申请日期 |
2006.10.13 |
申请人 |
SARAYAMA SEIJI;IWATA HIROKAZU;FUSE AKIHIRO |
发明人 |
SARAYAMA SEIJI;IWATA HIROKAZU;FUSE AKIHIRO |
分类号 |
C30B11/00;C30B9/00;C30B17/00;C30B21/02;C30B28/06 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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