| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent degradation of PMOS and NMOS transistors due to the stress difference of a nitride layer by implanting germanium(Ge) ions into the nitride layer. After a trench is formed by STI process on a semiconductor substrate, a buffer oxide layer and a nitride layer(212) are sequentially deposited on the resultant structure. After an ion-implantation mask(213) is formed to open the substrate, ion-implantation processing is performed into the open region to change the stress of the nitride layer. After the ion-implantation mask is removed, an isolation layer is then filled in the trench.
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