CMOS IMAGE SENSOR, AND METHOD FOR FABRICATING THE SAME

摘要

A CMOS image sensor and a method for manufacturing the same are provided to obtain high resolution image, to reduce dark current and to improve SNR(Signal to Noise Ratio) by forming a SiGe epitaxial layer in a light sensing region. A trench is formed at a light sensing region for forming a photodiode of a semiconductor substrate(201). A spacer(206) is formed at inner walls of the trench. A SiGe epitaxial layer(207) is grown on the trench to increase light sensitivity. A photodiode impurity region(211) is formed on the SiGe epitaxial layer. A gate electrode(210) is formed on the substrate to align one side of the photodiode impurity region.