| 摘要 |
Pyrimidopyrimidine derivatives and an organic thin film transistor by using the same compounds are provided to form thin film at room temperature by wet process, and induce high charge mobility and low leakage current of the organic thin film transistor. The pyrimidopyrimidine derivatives represented by the formula(1) to formula(9) are provided, wherein X1, X2, X3 and X4 are each independently -O-, -S-, -NRa-, -CRaRb-, -PORa-, -PRa- or single bond; Ra and Rb are each independently hydrogen, C1-C30 alkyl group, C6-C30 aryl group or C2-C30 heteroaryl group; and R1, R2, R3 and R4 are each independently and optionally substituted C6-C30 aromatic or optionally substituted C2-C30 heteroaromatic in which the substituent is halogen, nitro group, amino group, cyano group, C1-C30 alkyl group, C1-C30 hydroxyalkyl group, C1-C30 alkoxy group, C1-C30 alkoxyalkyl group, C6-C30 aryl group, C6-C30 arylalkyl group, C6-C30 aryloxy group, C2-C30 heteroaryl group, C2-C30 heteroarylalkyl group, C2-C30 heteroaryloxy group, C5-C20 cycloalkyl group, C2-C30 heterocycloalkyl group, C1-C30 alkylester group, C1-C30 heteroalkylester group, C6-C30 arylester group or C2-C30 heteroarylester group. The organic thin film transistor comprises a substrate, a gate electrode, a gate insulating film, an organic active film, and a source/drain electrode, wherein the organic active film is formed by the pyrimidopyrimidine derivatives.
|
