发明名称 PROCESS FOR PREPARING CUPROUS CHLORIDE WITH HIGH QUALITY FROM CUPRIC CHLORIDE CONTAINING WASTE
摘要 <p>A process for preparing cuprous chloride with high purity from a waste solution containing cupric chloride is provided to obtain cuprous chloride with high purity economically and simply by adding hydrazine into a solution obtained by adding sodium chloride and sodium hydroxide into a hydrochloric acid-containing waste etchant for PCB substrates. A process for preparing cuprous chloride comprises: adding sodium hydroxide into a cupric chloride-containing waste solution to adjust pH of the waste solution to a range of 2 to 3; adding sodium chloride into the waste solution; and reacting the resulting solution with hydrazine to obtain cuprous chloride. The amount of the hydrazine added into the waste solution is 0.4 to 0.8 mole with respect to the amount of metal copper contained in the cupric chloride-containing waste solution. The temperature of the waste solution after adding the hydrazine ranges from 70 to 95 deg.C. The method comprises immersing the obtained cuprous chloride into methanol, filtering the mixed solution, and drying the filtrate using air.</p>
申请公布号 KR20080018302(A) 申请公布日期 2008.02.28
申请号 KR20060080200 申请日期 2006.08.24
申请人 SEOAN CHEMTEC. CO., LTD. 发明人 LEE, SANG KAB
分类号 C22B7/00;C22B3/00 主分类号 C22B7/00
代理机构 代理人
主权项
地址