摘要 |
Provided are a manufacturing method of substrate grown graphene, substrate grown graphene, and a manufacturing apparatus. The manufacturing method of substrate grown graphene of the present invention comprises the following steps of: a. arranging a metal layer on a substrate; b. providing an etching gas and a carbon-containing gas, and conducting low pressure chemical vapor deposition (LPCVD); c. supplying an etching gas for the metal layer when supplying the carbon-containing gas, and growing graphene on the metal layer; and d. continuously conducting LPCVD from the process of the step c, and growing graphene on the substrate without the metal layer by continuously removing all of the metal in the metal layer by the etching gas. |