| 摘要 |
The present invention addresses the problem of providing an organic thin film transistor of superior carrier mobility and insulation reliability, and an organic semiconductor layer-forming composition with which said organic thin film transistor can be produced. This organic thin film transistor has a gate electrode, an organic semiconductor layer, a gate insulation layer provided between the gate electrode and the organic semiconductor layer, and a source electrode and drain electrode that are provided in contact with the organic semiconductor layer and are linked via the organic semiconductor layer, wherein the organic semiconductor layer is obtained by irradiating, with active light rays or radiation, an organic semiconductor layer precursor layer comprising an organic semiconductor material and a resin that has repeating units including, in a side chain, a structural site that produces acid anions when irradiated with active light rays or radiation. |
