发明名称 GAS SUPPLY LINE FOR ATOMIC LAYER DEPOSITION PROCESS AND GAS SUPPLY METHOD THEREOF
摘要 A gas supply nozzle for an atomic layer deposition process and a gas supply method using the same are provided to prevent a back flow effect of second reaction gas by supplying the first and second reaction gases through different gas nozzles. A first nozzle(306a) is used for a first flow process of a first reaction gas. The first nozzle has a two-stage structure. An upper part of the first nozzle is narrower than a lower part of the first nozzle. A second nozzle(306b) is used for a second flow process of a second reaction gas. The amount of the second reaction gas is larger than the amount of the first reaction gas. The second nozzle is used for surrounding the upper part of the first nozzle narrower than the lower part of the first nozzle.
申请公布号 KR20060131125(A) 申请公布日期 2006.12.20
申请号 KR20050051334 申请日期 2005.06.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, KI SUNG;LEE, JAE HYUNG;KIM, HONG GEUN
分类号 H01L21/20 主分类号 H01L21/20
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