| 摘要 |
The invention concerns a method for measuring the heights of patterns of an object. Incident light comprising a propagation mode of interest for at least one wavelength of interest, is reflected by a surface (18) of an object (14). The reflection comprises a wave front division of the light by at least one pattern (5), into division components (16, 17). The method then consists in collecting the reflected light (7), followed by filtering the collected light; extracting from the filtered light, for wavelengths of interest, data of phase differences between the division components. Such a method enables the heights of patterns to be measured on an object whose surface is structured and reflects light, in particular the patterns on a silicon wafer. Such a measuring method enables the etching of patterns, for example during deep plasma etching, to be monitored in situ in real time. The invention also concerns a device for implementing said method. |
