MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing thermal loads to a substrate, and to provide a manufacturing method of a semiconductor device capable of improving the characteristics of a semiconductor element. SOLUTION: In the manufacturing method of a semiconductor device, a silicon film is formed on the substrate 100, and then the silicon film is recrystallized with the flame of a gas burner 122 with mixed gas of hydrogen and oxygen as fuel as a heat source. COPYRIGHT: (C)2008,JPO&INPIT