| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an oxide single crystal for efficiently producing an oxide single crystal with excellent quality while sufficiently decreasing impurities included in the source material. SOLUTION: The method includes: a melting step of heating a source material used for producing an oxide single crystal to obtain a melt 18; an impurity removing step of retaining the melt state to decrease impurities included in the melt; and a single crystal growing step of producing an oxide single crystal 1 from the melt 18 of the source material after the impurity removing step. In the impurity removing step, the melt state is retained in a reduced pressure atmosphere of from 1.0×10<SP>-4</SP>to 1.0 Pa, or in an inert gas atmosphere containing at least one kind of gas selected from a group consisting of Ar, Ne, Kr and N<SB>2</SB>, or in the inert gas atmosphere with oxygen mixed by 0.01 to 20 vol%, and the retention time is specified to 1 to 1,000 hours. COPYRIGHT: (C)2009,JPO&INPIT
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