| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist stripping liquid composition that completely eliminates residues on a pattern side wall or on a barrier metal in the upper part of the pattern at a low temperature in a short period of time, the residues remaining after dry etching or ashing in a wiring step for a semiconductor element such as an IC and an LSI or a liquid crystal panel element, and that suppresses deposition of granular foreign substances on a barrier metal on a wiring line, and also to provide a method for manufacturing a semiconductor element using the composition. SOLUTION: Upon stripping the residues on a pattern side wall or on a barrier metal in the upper part of the pattern, the residues remaining after dry etching or ashing in the process of manufacturing a semiconductor element or a liquid crystal panel element, the resist pattern is cleaned ( by a contact process) with a resist stripping liquid composition containing a fluorine compound and at least one kind of water-soluble compound selected from 1,10-phenanthroline monohydrate, 1,10-phenanthrloline anhydride, 2,2'-bipyridine, 1,2,3-benzotriazole, pyridine, 3,5-dimethylpyrazole, nitrilotriacetic acid, propionic acid and acetic acid. COPYRIGHT: (C)2010,JPO&INPIT |
