发明名称 FILM FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a high-purity thick film containing a metal element, and comprising an oxide, a nitride, a carbide or a sulfide, efficiently on the surface of a substrate.SOLUTION: In a film formation method, mist 18 charged positively or negatively is generated by using a raw material solution in which a component derived from a metal element is dissolved in an atmosphere containing gas comprising molecules containing at least one kind selected from an oxygen element, a nitrogen element, a carbon element and elemental sulfur, and the charged mist 18 is supplied continuously to a substrate 20, and the charged mist staying on the surface of the substrate 20 or its periphery is irradiated with a laser beam having a wavelength of 500 nm-11 μm.SELECTED DRAWING: Figure 1
申请公布号 JP2016180158(A) 申请公布日期 2016.10.13
申请号 JP20150061593 申请日期 2015.03.24
申请人 JAPAN FINE CERAMICS CENTER 发明人 KIMURA TEIICHI
分类号 C23C26/00;B05D1/04;B05D3/04;B05D3/06 主分类号 C23C26/00
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