| 摘要 |
Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising pentachlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon- containing film on a substrate using the Silicon Precursor Compound, and the silicon- containing film formed thereby. |
