| 摘要 |
PROBLEM TO BE SOLVED: To provide an efficient production method of a diamond by a heteroepitaxial growth method using Ni, Cu, Co or the like for a base material.SOLUTION: The production method of the diamond includes: a step for making carbon solid-solution on any of Ni, Cu or Co; and a step for making a diamond layer epitaxial growth on the surface of the substrate on which solid-solution on the carbon is performed. When the diamond layer is cooled to a room temperature after forming it on the surface of the base material, as a solid-solution limit density of the carbon for such base material has high temperature dependency, the carbon on which solid-solution is performed in the substrate is precipitated as a graphite layer comprising a layer structure on the base material surface, that is, between the diamond layer and the base material. This soft graphite layer becomes a buffer film, distortion is hard to occur in the diamond layer, and exfoliation easily occurs in this part, and thereby, self-supporting diamond is easily obtained.SELECTED DRAWING: Figure 1 |
