| 发明名称 |
GAAS SUBSTRATE WITH SB BUFFERING FOR HIGH IN DEVICES |
| 摘要 |
GaAs substrates with compositionally graded buffer layers for matching lattice constants with high-Indium semiconductor materials such as quantum well infrared photoconductor devices and thermo photo voltaic devices are disclosed.
|
| 申请公布号 |
US2005040429(A1) |
申请公布日期 |
2005.02.24 |
| 申请号 |
US20030418230 |
申请日期 |
2003.04.17 |
| 申请人 |
UPPAL PARVEZ N. |
发明人 |
UPPAL PARVEZ N. |
| 分类号 |
H01L;H01L21/20;H01L29/06;H01L31/0304;H01L31/0352;H01L31/068;H01L31/072;H01L31/09;(IPC1-7):H01L29/06 |
主分类号 |
H01L |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
