| 摘要 |
A static semiconductor storage device is described. This device includes a plurality of word lines, a plurality of first and second bit lines and memory cells. The word lines extend in a row direction. The first bit lines extend in a column direction. The second bit lines extend in the column direction and are paired. The memory cells are connected to the word lines by each row as well as to the pairs of second bit lines by each column. The memory cells of the same column share the first bit line and are controlled to electrically couple with the second bit line thereof at different times.
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