| 摘要 |
A MOSFET device and a manufacturing method thereof are provided to maintain electrical isolation between adjoining recess gates by forming a groove having a predetermined depth through etching a bit line contact area of a semiconductor substrate. A semiconductor substrate(100) has a first groove(H1) defined at a first depth in a gate area and a second groove(H2) defined at a second depth in a bit line contact area. A recess gate(R/G) is formed in the gate area of the semiconductor substrate including the first groove. A first junction area(600a) is formed in the storage node contact area of the semiconductor substrate. A second junction area(600b) is formed in the bit line contact area of the semiconductor substrate under the second groove. A protective layer(500) is formed on the entire surface of the substrate.
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