HOTWALL REACTOR AND METHOD FOR REDUCING PARTICLE FORMATION IN GAN MOCVD

摘要

Systems and methods to suppress the formation of parasitic particles during the deposition of a III- V nitride film with, e.g., metal-organic chemical vapor deposition (MOCVD) are described. In accordance with certain aspects of the invention, a hotwall reactor design and methods associated therewith, with wall temperatures similar to process temperatures, so as to create a substantially isothermal reaction chamber, may generally suppress parasitic particle formation and improve deposition performance.