| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of SiC single crystals which can be suitably used for preventing the crystals from being cracked or broken. Ž<P>SOLUTION: The manufacturing apparatus for SiC single crystals by sublimation recrystallization method is provided with a graphite crucible 1 constituted of a bottomed cylindrical container body 10, a circular lid 20 and a skirt part 30 having a hollow truncated pyramidal shape; and to the inner wall surface of the skirt part 30, a TaC member 31 having truncated pyramidal shape the same as that of the skirt part 30 is fixed. The TaC member 31 is formed, after forming a seamless cup-shaped member by fabricating a tantalum sheet material by deep drawing, by inserting the cup-shaped member into the inside of the skirt part 30 to fix it, then carbonization-treating the cup-shaped member. Since the inner wall surface of the skirt part 30 is seamlessly coated with the TaC member 31, it is made possible that carbon particles are suppressed from being taken into an SiC single crystal 70, also formation of projections of the SiC single crystal 70 is prevented, and cracks or breakage can be prevented from being easily generated. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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