| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method and a forming device for a silicon oxynitride film, which can lift up nitrogen while suppressing outward diffusion of the nitrogen. SOLUTION: After a silicon oxide film 51 is formed on a semiconductor wafer W, nitrogen is introduced into the silicon oxide film 51 to form a silicon oxynitride film 52 on the semiconductor wafer W. Then, the workpiece with the silicon oxynitride film 52 formed is annealed at a temperature of at least 950°C. Further, oxygen is introduced into the interface between the semiconductor wafer W and silicon oxynitride film 52 to form a silicon oxide film 53 between them. COPYRIGHT: (C)2010,JPO&INPIT
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