发明名称 Semiconductor device and method for manufacturing the same
摘要 There is provided a semiconductor device in which the junction strength of land portions and external terminals is increased, the disconnection of the external terminal is surely prevented, and the connection reliability is ensured over an extended period of time. An insulating resin layer which insulates metal wires from one another is formed on a semiconductor element, an end portion of the metal wire is connected to an electrode on the semiconductor element, the other end portion of the metal wire is connected to an external terminal to form a land, the entire surface of the semiconductor element except the connecting portions of the lands is covered with a surface-layer resin layer, and a projection is provided on the top surface of a land portion of at least one of the lands. Because of this, after their soldering, the external terminal holds the perimeter of the projection on the land portion, so that the external terminal can be surely connected to the land portion. As a result, the semiconductor device which ensures their connection reliability over an extended period of time can be obtained.
申请公布号 US2005167832(A1) 申请公布日期 2005.08.04
申请号 US20050037262 申请日期 2005.01.19
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KAINOU KAZUYUKI;YAGOH MASATOSHI;KUWABARA KIMIHITO;OHTANI KATSUMI
分类号 H01L23/12;H01L21/56;H01L21/60;H01L23/31;H01L23/485;H01L23/498;H01L29/40;(IPC1-7):H01L29/40 主分类号 H01L23/12
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